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Infineon Technologies to supply GaN power chips for Nvidia's 800 V data centers

Infineon Technologies announced on October 21 that it is expanding cooperation with Nvidia on high-voltage intermediate bus converters for 800 V DC power conversion in AI data centers. It will supply GaN power semiconductors and control solutions to reduce voltage for server boards as risi

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Infineon Technologies to supply GaN power chips for Nvidia's 800 V data centers
Photo: www.thelec.kr

Expanded cooperation on power conversion

Infineon Technologies is expanding cooperation with Nvidia to develop 800 V direct-current (DC) power conversion technology for artificial intelligence (AI) data centers.

It will supply gallium nitride (GaN) power semiconductors and control solutions for devices that reduce 800 V to intermediate voltages for server boards.

Infineon Technologies announced on October 21, local time, that it is expanding cooperation with Nvidia on the development of high-voltage intermediate bus converters (HV IBCs). This extends the cooperation announced last year, which focused on protection circuits for 800 V server racks.

An IBC reduces the high voltage entering a server to an intermediate voltage inside the board. That voltage is then converted again to the voltage required by the graphics processing unit (GPU) core. Infineon Technologies supports configurations that reduce 800 V to 50 V, 12 V and 6 V.

Higher voltage and GaN components

Growing GPU power consumption is the reason 800 V DC is attracting attention. AI data centers are deploying large numbers of GPUs, pushing power requirements per rack into the megawatt range. Alongside existing alternating-current (AC) and low-voltage DC approaches, Nvidia is pursuing a design that delivers 800 V DC directly to racks and is developing the associated ecosystem. This approach reduces power losses and wiring requirements.

GaN power semiconductors switch faster and have lower conversion losses than silicon devices. Infineon Technologies said they can achieve switching frequencies of up to 1 MHz. Faster switching allows smaller surrounding components, such as transformers and coils, to be used. More power can be handled in the same space, making this advantageous for high-density AI servers with limited space. Heat generation is also reduced.

Infineon Technologies will bundle GaN power semiconductors, PSoC Control C3 controllers and its EiceDRIVER product family into system solutions for IBCs.

Infineon Technologies Chief Executive Jochen Hanebeck said: “GaN-based system solutions are a key technology for enabling next-generation data centers. Infineon Technologies is helping deliver the power needed in the AI era, from the grid to the core.”


Original Korean article: The Elec

English brief by Korea Wind Intelligence, koreawindintel.com

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