Power modules based on Infineon Technologies' CoolGaN technology aim to maximize efficiency through fewer components and high-frequency switching
Global energy technology company Enphase Energy and Infineon Technologies announced the introduction of what they described as the world's first 900V gallium nitride (GaN) monolithic bidirectional switch (BDS), for use in Enphase solid-state transformer (SST) power modules. The newly unveiled device extends GaN technology to 900V while retaining high-frequency switching capabilities, enabling compact and efficient power conversion.
Enphase has led system development and demonstration, drawing on more than 10 years of in-house GaN power conversion research and Infineon Technologies' device technology and engineering expertise. Enphase has already incorporated 650V GaN BDS devices into power electronics for mass production, and GaN HEMT technology is operating in Enphase IQ9 microinverters installed in the field. The collaboration uses Infineon Technologies' CoolGaN bidirectional switch portfolio to extend the technology beyond 650V into medium-voltage systems.
The 900V GaN device broadens design options for high-performance power conversion, an area traditionally dominated by silicon carbide (SiC), while remaining within the range of components rated below 1kV. It supports a single-stage architecture characterized by high-frequency switching, low electromagnetic interference (EMI) and fewer potential failure points. High-frequency switching can reduce the size of transformers and magnetic components required in the power stage, allowing reductions in system volume, weight and cost.
Introducing higher-voltage switches within the low-voltage range changes the economics of power conversion. Inside a solid-state transformer, medium-voltage inputs are handled with fewer inverters connected in series while retaining the low switching losses and inherent bidirectionality of GaN BDS devices. Reducing the component count lowers system losses at the same input current and reduces both the number of components in the power path and the total switch count.
On the DC side, high-voltage unidirectional switches (UDS) enable single-pole 800V power generation instead of a split +/-400V bus. Split +/-750V generation can also support future 1,500VDC bus architectures while reducing switch counts and bridge losses.
The technology will be used in Enphase's IQ solid-state transformer (IQ SST) platform for AI data centers, where power density, efficiency and uptime are key economic factors. It also supports three-phase line-to-line designs for 480V applications in the United States and 400V applications in other regions, and is expected to help reduce switch counts, losses and costs in commercial solar inverters.
Johannes Schoiswohl, executive vice president and head of the GaN Systems business at Infineon Technologies, said: “Medium-voltage solid-state transformers are an area that demonstrates the value of high-voltage GaN. Moving beyond 650V allows system designers to reduce costs and losses through the architecture itself rather than through complex optimization.”
Hans van Antwerpen, chief technology officer at Enphase Energy, said: “GaN is already deployed and operating in IQ9 microinverters in the field, and that field data supports confidence in its use in megawatt-scale systems.” Van Antwerpen added: “Extending to 900V allows us to secure voltage margins and reduce the number of converters in the system while maintaining high-frequency switching. By reducing components in the power path, we have improved efficiency and minimized potential causes of failure.”
The 900V GaN BDS device has successfully completed testing and is currently being integrated into IQ SST development builds. Production qualification is scheduled to follow.
Original Korean article: 2news.co.kr
English brief by Korea Wind Intelligence, koreawindintel.com
